sot-23-6l plastic-encapsulate mosfets CJL8810 dual n-channel mosfet description the CJL8810 uses advan ced trench technology to provide excellent r ds(on) and low gate charge. it is esd prot ected. this device is suitable for use as a uni-directional or bi-dir ectional load switch,facilitated by its common-drain configuration. marking: maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current i d 7 a pulsed drain current i dm * 30 a thermal resistance from junction to ambient r ja 83.3 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes(1/8?? from case for 10 s) t l 260 *repetitive rating pluse width limited by junction temperature. so t -23-6l 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =16v,v gs = 0v 1 a gate-body leakage current i gss v gs =4.5v, v ds = 0v 1 a v gs =8v, v ds = 0v 10 a gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.4 1 v drain-source on-resistance (note 1) r ds(on) v gs =10v, i d =7a 20 m ? v gs =4.5v, i d =6.6a 22 m ? v gs =3.8v, i d =6a 24 m ? v gs =2.5v, i d =5.5a 26 m ? v gs =1.8v, i d =5a 35 m ? forward tranconductance (note 1) g fs v ds =5v, i d =7a 9 s diode forward voltage (note 1) v sd i s =1a, v gs = 0v 1 v dynamic parameters (note 2) input capacitance c iss v ds =10v,v gs =0v,f =1mhz 1150 pf output capacitance c oss 185 pf reverse transfer capacitance c rss 145 pf total gate charge q g v ds =10v,v gs =4.5v,i d =7a 15 nc gate-source charge q gs 0.8 nc gate-drain charge q gd 3.2 nc switching parameters (note 2) turn-on delay time t d(on) v gs =5v,v dd =10v, r l =1.35 ? ,r gen =3 ? 6 ns turn-on rise time t r 13 ns turn-off delay time t d(off) 52 ns turn-off fall time t f 16 ns notes : 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,dec,2013
0123456 0 4 8 12 16 20 024681 0 0 20 40 60 80 0 4 8 12 16 20 0 20 40 60 80 0123 0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 25 50 75 100 125 0.55 0.60 0.65 0.70 0.75 0.80 22 2.2v 2.0v 1.8v 1.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.2v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =3a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs =10v v gs =2v on-resistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) output characteristics cj l 88 1 0 drain current i d (a) gate to source voltage v gs (v) v ds =5v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? threshold voltage v th (v) ambient temperature t a ( ) i d =250ua threshold voltage 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,dec,2013
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